SURFACE EMITTING LASER ELEMENT, METHOD FOR THE MANUFACTURING OF A SURFACE EMITTING LASER ELEMENT AND

专利摘要:
surface-emitting laser element, method for manufacturing a surface-emitting laser element and atomic oscillator. A surface-emitting laser element is described that includes a semiconductor substrate and multiple surface-emitting lasers configured to emit light of mutually different wavelengths, each surface-emitting laser including a lower bragg reflector provided on the semiconductor substrate, a resonator provided over the lower bragg reflector, an upper bragg reflector provided over the resonator, and a wavelength adjustment layer provided over the upper bragg reflector or lower bragg reflector, the wavelength adjustment layers included with lasers surface emitters having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two types of materials and the numbers of adjustment layers included in the wavelength adjustment layers being mutually different.
公开号:BR112014013366B1
申请号:R112014013366-2
申请日:2012-11-29
公开日:2021-09-14
发明作者:Shunichi Sato；Ryoichiro SUZUKI
申请人:Ricoh Company, Ltd；
IPC主号:

专利说明:

Technical Field
[0001] At least one aspect of the present invention relates to a surface emitting laser element, a method for manufacturing a surface emitting laser element and an atomic oscillator. Background of the Invention
[0002] A vertical cavity surface emitting laser (VCSEL) is a semiconductor laser for emitting light in a vertical direction relative to a surface of a substrate and has characteristics of low cost, low power consumption, compact, high in performance and readily integrated two-dimensionally when compared to an edge emission semiconductor laser.
[0003] A surface emitting laser has a resonator area that includes an active layer and a resonator structure consisting of an upper reflector and a lower reflector above and below the resonator area, respectively (e.g., Patent Application Publication Japanese No. 2008-53353). Consequently, a resonator area is formed with a predetermined optical thickness, in such a way that light with a wavelength oscillates in the area of the resonator so as to obtain light with an oscillating wavelength À. An upper reflector and a lower reflector are formed by alternately laminating and shaping materials with different refractive indices, i.e. a low refractive index material and a high refractive index material, and are molded in such a way that the film thickness optical of the low refractive index material and the high refractive index material is /4, so as to obtain high reflectance at À wavelength.
[0004] In addition, forming elements for different wavelengths on a chip are also described (for example, Japanese Patent No. 2751814, Japanese Patent Application No. 2000-058958, Japanese Patent Application Publication No. 11- 330631 and Japanese Patent Application Publication No. 2008-283129). It may be possible to form such a surface emitting laser element with multiple wavelengths by forming a wavelength adjustment layer with a structure formed by alternately laminating two materials for different pickling fluids onto a resonator area of the laser emitting element and removing such wavelength adjustment layer one by one for each surface emitting laser by wet etching to vary the thickness of the wavelength adjustment layer.
[0005] However, there is an atomic clock (atomic oscillator) as a clock that can measure time extremely accurately and a technique for miniaturizing such an atomic clock, etc. is studied. An atomic clock is an oscillator that is based on an amount of transition energy of an electron that constitutes an alkali metal atom, etc. and, in particular, it is possible to obtain a very accurate value of the transition energy of an electron in an alkali metal atom under the condition of no disturbance, whereby it may be possible to obtain frequency stability several orders of magnitude greater than the than a quartz oscillator.
[0006] There are a few types of such an atomic clock, and among these, the frequency stability of a Coherent Population Trapping (CPT) type atomic clock is about three orders of magnitude greater than that of a quartz oscillator conventional, in which it may also be possible to expect a very compact type and extremely low electrical power consumption (eg Applied Physics Letters, Vol. 85, pages 1460-1462 (2004), Comprehensive Microsystems, vol. 3, pages 571 -612 and Japanese Patent Application Publication No. 2009-188598).
[0007] A CPT-type atomic clock has a laser element, a cell containing an alkali metal and a light receiving element for receiving laser light transmitted through the cell, wherein the laser light is modulated and two transitions of an electron into an alkali metal atom are carried out simultaneously by sideband wavelengths that occur on both sides of a carrier wave at a particular wavelength to drive excitation thereof. The transition energy for such a transition is invariant and, when a sideband wavelength of laser light coincides with a wavelength that corresponds to the transition energy, a phenomenon of increasing transparency occurs, in which the rate of absorption of light from an alkali metal is reduced. Thus, such an atomic clock is characterized by the fact that the wavelength of a carrier wave is adjusted to decrease the light absorption rate of an alkali metal and a signal detected by the light receiving element is fed back to a modulator. , so that a modulation frequency of laser light from a laser element is adjusted by the modulator. Additionally, in such an atomic clock, laser light emitted from the laser element radiates onto a cell containing an alkali metal through a collimator and an X/4 wave plate.
[0008] For a light source for such a very compact type atomic clock, a compact surface emitting laser with a very low electrical power consumption and a high wavelength quality is suitable and the accuracy of the wavelength is desired. wave of a carrier wave is ± 1 nm with respect to a particular wavelength (eg, Proc. of SPIE Vol. 6132, 613208-1 (2006)).
[0009] However, when a surface emitting laser element is used for an atomic clock, it may be necessary to provide a narrow wavelength range (5 nm) for each surface emitting laser. Consequently, a wavelength adjustment layer is formed over a resonator area of a surface emitting laser, and therefore, when such a surface emitting laser with a narrow wavelength range is formed, it may be necessary to form a film. in such a way that the thickness of each film in the wavelength adjustment layer is very thin. However, it can be difficult to form a film in such a way that the thickness of each film for forming a wavelength adjustment layer is extremely thin and uniform due to dispersion of the growth rate, irregularities in the distribution of a thickness of the movie, etc. at formation of a semiconductor layer.
[0010] Specifically, as indicated in Japanese Patent No. 2751814, when a wavelength adjustment layer is formed over a resonator area and when a desired oscillation wavelength range is 5 nm or less, it can be It is necessary for the film thickness of a wavelength adjustment layer to be 1.2 nm or less, but it can be extremely difficult for the current crystal growth technique of a composite semiconductor to control such thin film thickness. Thus, even if the film thickness is slightly modified, the oscillation wavelength can be influenced by it. Description of the Invention
[0011] According to one aspect of the present invention, there can be provided a surface emitting laser element that includes a semiconductor substrate and multiple surface emitting lasers configured to emit light at mutually different wavelengths, each surface emitting laser including a lower Bragg reflector located over the semiconductor substrate, a resonator located over the lower Bragg reflector, an upper Bragg reflector located over the resonator, and a wavelength adjustment layer located over the upper Bragg reflector or reflector. Lower Bragg, the wavelength adjustment layers included in surface emitting lasers having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two types of materials and the numbers of adjustment layers included in the wavelength adjustment layers being mutually different. tes.
[0012] According to another aspect of the present invention, there can be provided a method for manufacturing a surface emitting laser element that includes multiple surface emitting lasers configured to emit light at mutually different wavelengths including the forming steps of a lower Bragg reflector over a semiconductor substrate, forming a resonator over the lower Bragg reflector, forming an upper Bragg reflector over the resonator, laminating adjustment layers made of two types of materials onto the upper Bragg reflector or the lower Bragg reflector to form a wavelength adjustment layer, removing an adjustment layer in the wavelength adjustment layer using a first pickling fluid and removing another adjustment layer in the length adjustment layer waveform using a second blasting fluid different from the first blasting fluid, so that the adjustment layers of c. The wavelengths included in the surface emitting lasers have mutually different thicknesses and the numbers of adjustment layers included in the wavelength adjustment layers are mutually different.
[0013] According to another aspect of the present invention, there may be provided an atomic oscillator that includes the surface emitting laser element as described above, an alkali metal cell that includes an alkali metal to be irradiated with light emitted from of the surface emitting laser element, a photodetector configured to detect light that has been transmitted through the alkali metal cell, and a controller configured to control the frequency of oscillation of the surface emitting laser element based on the light detected by the photodetector. Brief Description of Drawings
[0014] Figure 1 is a top view of a surface emitting laser element in a first embodiment.
[0015] Figure 2 is a diagram illustrating a surface emitting laser element in a first embodiment.
[0016] Figure 3 is a structural diagram of a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0017] Figure 4A and Figure 4B are diagrams illustrating (1) a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0018] Figure 5A and Figure 5B are diagrams illustrating (2) a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0019] Figure 6A and Figure 6B are diagrams illustrating (3) a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0020] Figure 7A and Figure 7B are diagrams illustrating (4) a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0021] Figure 8 is a diagram illustrating (5) a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0022] Figure 9 is a diagram illustrating (6) a wavelength adjustment layer of a surface emitting laser element in a first embodiment.
[0023] Figure 10 is a top view of a surface emitting laser element in a second embodiment.
[0024] Figure 11 is a diagram illustrating a surface emitting laser element in a second embodiment.
[0025] Figure 12A and Figure 12B are diagrams illustrating (1) a wavelength adjustment layer of a surface emitting laser element in a second embodiment.
[0026] Figure 13A and Figure 13B are diagrams illustrating (2) a wavelength adjustment layer of a surface emitting laser element in a second embodiment.
[0027] Figure 14 is a top view of a surface emitting laser element in a third embodiment.
[0028] Figure 15A and Figure 15B are diagrams illustrating a surface emitting laser element in a third embodiment.
[0029] Figure 16 is a correlation diagram between a first wavelength adjustment layer and a second wavelength adjustment layer and an oscillating wavelength.
[0030] Figure 17A and Figure 17B are diagrams illustrating (1) a first wavelength adjustment layer of a surface emitting laser element of a third embodiment.
[0031] Figure 18A and Figure 18B are diagrams illustrating (2) a first wavelength adjustment layer of a surface emitting laser element of a third embodiment.
[0032] Figure 19A and Figure 19B are diagrams illustrating (3) a first wavelength adjustment layer of a surface emitting laser element of a third embodiment.
[0033] Figure 20 is a top view of a surface emitting laser element in a fourth embodiment.
[0034] Figure 21 is a structural diagram of an atomic oscillator in a fifth embodiment.
[0035] Figure 22 is a diagram illustrating the atomic energy level to illustrate a CPT type.
[0036] Figure 23 is a diagram illustrating an output wavelength at the time of modulation of a surface emitting laser.
[0037] Figure 24 is a correlation diagram between the modulation frequency and the amount of transmitted light. Implementation(s) for the Implementation of the Invention
[0038] Embodiment(s) of the present invention will be described below. In addition, identical reference numbers will apply to identical elements, etc., and (a) description(s) thereof will be omitted. [First Implementation] (Structure of a surface emitting laser element)
[0039] A surface emitting laser element in a first embodiment will be described. As illustrated in Figure 1 and Figure 2A, a surface emitting laser element 10 in the present embodiment has multiple surface emitting lasers and specifically has a first surface emitting laser 11, a second surface emitting laser 12, a third surface emitting laser 13 and a fourth surface emitting laser 14. Additionally, Figure 1 has been simplified for the sake of explanation of the present embodiment, in which the representation of a contact layer, etc., has been conveniently omitted. In addition, Figure 2 is a cross-sectional diagram provided when cutting along a dotted/dashed line 1A-1B in Figure 1.
[0040] The surface emitting laser element 10 in the present embodiment is formed on a 300 µm square semiconductor chip, wherein each of the first surface emitting laser 11, second surface emitting laser 12, third surface emitting laser 13 and a fourth surface emitting laser 14 formed on such a semiconductor chip is connected to an electrode block provided to correspond thereto. Specifically, an electrode block 21 is connected to the first surface emitting laser 11 and an electrode block 22 is connected to the second surface emitting laser 12, while an electrode block 23 is connected to the third surface emitting laser 13 and a electrode block 24 is connected to the fourth surface emitter laser 14.
[0041] Furthermore, the first surface emitting laser 11, the second surface emitting laser 12, the third surface emitting laser 13 and the fourth surface emitting laser 14 provide emitted light with mutually different wavelengths. That is, an A.1 wavelength emitted from the first surface emitting laser 11, an A.2 wavelength emitted from the second surface emitting laser 12, an A.3 wavelength emitted from the third surface emitting laser 13 and a wavelength λ4 emitted from the fourth surface emitting laser 14 are mutually different wavelengths.
[0042] Additionally, the surface emitting laser element, in the present embodiment, is to obtain a surface emitting laser with an oscillating wavelength of 894.6 nm, wherein four surface emitting lasers are formed on a chip. 300 µm square semiconductor (substrate). Since it may be possible to form multiple surface emitting lasers in a narrow area on a surface emitting laser element, there is little change in the position of the light emitting point, even when a surface emitting laser to conduct light emission is turned on. Therefore, a substrate size is a size of 500 µm x 500 µm or less, in which adjustment of the optical axis, etc., may be unnecessary or extremely facilitated.
[0043] For the surface emitting laser element in the present embodiment, semiconductor materials with different refractive indices are alternately laminated onto and formed on a substrate 101 made of a semiconductor, etc., to form a lower Bragg reflector 102, and a lower spacer layer 103, an active layer 104, and an upper spacer layer 105 are formed over the lower Bragg reflector 102. A first upper Bragg reflector 106, a contact layer 110, a wavelength adjustment area 120, and a second upper Bragg reflector 107 is formed on the upper spacer layer 105. In addition, an upper electrode 111 is formed over and connected to the contact layer 110 and a lower electrode 112 is formed on a back face of the substrate 101. wavelength adjustment layer 130 is constituted by the contact layer 110 and the wavelength adjustment area 120 in the present embodiment, the layer of wavelength adjustment area 130 may only consist of a wavelength adjustment area 120 in a case where the contact layer 110 is not formed adjacent to the wavelength adjustment area 120. Additionally, the Bragg reflector lower 102, lower spacer layer 103, active layer 104, upper spacer layer 105, upper first Bragg reflector 106, contact layer 110, and wavelength adjustment area 120, which are semiconductor layers formed on substrate 101, are formed by semiconductor materials of epitaxial growth. Specifically, such semiconductor layers are formed by epitaxial growth in Chemical Vapor Deposition on Organic Metal (Metal Organic Chemical Vapor Deposition - MOCVD) or Molecular Beam Epitaxy (Molecular Beam Epitaxy - MBE). In addition, a Bragg reflector as described in the descriptive report for the present patent application can be described as a distributed Bragg reflector (DBR).
[0044] In addition, the second upper Bragg reflector 107 is formed on the surface adjustment layer. The second upper 107 Bragg reflector is a dielectric film made of an oxide, nitride, fluoride, etc., and formed by alternately laminating and shaping (a) film(s) of high refractive index material and (a) film( s) of material with a low refractive index. In addition, an upper Bragg reflector is comprised of the first upper Bragg reflector 106, the wavelength adjustment layer 130 and the second upper Bragg reflector 107 in the present embodiment. In addition, the wavelength adjustment layer 130 can be formed within the lower Bragg reflector 102.
[0045] In the surface emitting laser element in the present embodiment, the thicknesses of the wavelength adjustment areas 120 in the wavelength adjustment layers 130 in the first surface emitting laser 11, second surface emitting laser 12, third surface emitting laser 13 and fourth surface emitting laser 14 are different from each other. Specifically, as illustrated in Figure 3, the wavelength adjustment area 120 is formed over the contact layer 110, wherein the wavelength adjustment area 120 is comprised of a first adjustment layer 121, a second layer. adjustment layer 122 and a third adjustment layer 123. In the present embodiment, the first adjustment layer 121 and the third adjustment layer 123 are made of GaInP, while the second adjustment layer 122 is made of GaAsP. Additionally, materials for making the first adjustment layer 121, second adjustment layer 122, and third adjustment layer 123 can be opposed thereto.
[0046] Thus, the thicknesses of the wavelength adjustment areas 120 in the first surface emitting laser 11, second surface emitting laser 12, third surface emitting laser 13 and fourth surface emitting laser 14 are different in the laser element surface emitter in the present embodiment.
[0047] Specifically, the first adjustment layer 121, the second adjustment layer 122 and the third adjustment layer 123 are formed over the wavelength adjustment area 120 in the first surface emitting laser 11, wherein light with a A.1 wavelength is emitted, which corresponds to a thickness of the wavelength adjustment layer 130 which is a sum of such wavelength adjustment area 120 and the contact layer 110.
[0048] Furthermore, the first adjustment layer 121 and the second adjustment layer 122 are formed in the wavelength adjustment area 120 in the second surface emitting laser 12, wherein light with a wavelength of A.2 is emitted, which corresponds to a thickness of the wavelength adjustment layer 130, which is a sum of such wavelength adjustment area 120 and the contact layer 110.
[0049] Furthermore, the first adjustment layer 121 is formed in the wavelength adjustment area 120 in the third surface emitting laser 13, wherein light with a wavelength of A.3 is emitted, which corresponds to a thickness of the wavelength adjustment layer 130 which is a sum of such wavelength adjustment area 120 and the contact layer 110.
[0050] Furthermore, the wavelength adjustment area 120 is not formed in the fourth surface emitting laser 14 and consequently light with a wavelength A.4 is emitted, which corresponds to a thickness of the layer of wavelength setting 130 which is equal to the thickness of the contact layer 110.
[0051] Thus, it may be possible to change the thickness of the wavelength adjustment layers 130 in the first surface emitting laser 11, second surface emitting laser 12, third surface emitting laser 13, and fourth surface emitting laser 14 slightly a little, and it may be possible to emit light with each wavelength corresponding to a thickness of at least one or each of the wavelength adjustment layers 130. (Method for manufacturing a surface emitting laser element)
[0052] In the present embodiment, an n-GaAs substrate is used for substrate 101. In addition, the lower Bragg reflector 102 is formed by laminating 35.5 pairs of a high n-Al0.1Ga0.9As layer refractive index and an n-Al0,9Ga0,1As layer of low refractive index, in such a way that the optical film thickness of each layer is X/4.
[0053] The active layer 104 consisting of a quantum cavity layer of GaInAs/GaInPAs barrier layer is formed on the lower Bragg reflector 102 through the lower spacer layer 103 made of Al0.2Ga0.8As. The upper spacer layer 105 made of Al0.2Ga0.8As and the upper first Bragg reflector 106 are formed over the active layer 104. Additionally a resonator area having an optical thickness of one wavelength is constituted by the lower spacer layer 103 , active layer 104 and upper spacer layer 105.
[0054] The first upper Bragg reflector 106 is formed by laminating 6 pairs of a high refractive index n-Al0.1Ga0.9As layer and low refractive index n-Al0.9Ga0.1As layer, in a manner such that the optical film thickness of each layer is A./4. One of the low refractive index layers of the upper first Bragg reflector 106 is comprised of an electric current narrowing layer 108 made of AlAs, wherein a peripheral portion of the electric current narrowing layer 108 is selectively oxidized to form an area. of selective oxidation 108a and an unoxidized electrical current narrowing area 108b is formed over a central portion thereof.
[0055] The contact layer 110 made of p-GaAs and the wavelength adjustment area 120 constituted by the first adjustment layer 121, second adjustment layer 122 and third adjustment layer 123 are formed over the first Bragg reflector top 106. In addition, a portion of the layers in the wavelength adjustment area 120 is removed to match a wavelength emitted from each surface emitting laser, as described above.
[0056] Each surface emitting laser of a surface emitting laser element in the present embodiment has a table structure, wherein such a table structure is formed by removing a semiconductor layer between the surface emitting lasers to be formed by virtue of etching . After a table structure is formed, heat treatment in water vapor is carried out to oxidize the electrical current narrowing layer 108 from a periphery of the table structure, whereby the selective oxidation area 108a (an oxidized area) over a portion peripheral and non-oxidized electrical current narrowing area 108b over a central portion are formed. That is, the electrical current narrowing layer 108 is comprised of the oxidized selective oxidation area 108a and the unoxidized electrical current narrowing area 108b to provide an electrical current narrowing structure. Additionally, the shape, viewed from above the table structure, can be shaped to have a circular shape or it can be shaped to have a shape such as an elliptical shape, a square shape, or a rectangular shape.
[0057] Furthermore, the second upper Bragg reflector 107 is formed on the wavelength adjustment layer 130, whereby removal corresponding to each surface emitting laser is performed by means of etching. The upper second Bragg reflector 107 is formed by laminating 8.5 pairs of a high refractive index TiO2 layer and a low refractive index SiO2 layer such that the optical film thickness of each layer is A ./4. In addition, it may be necessary that only the second upper Bragg reflector 107 is made of (a) dielectric material(s) and formed by rolling a high refractive index material and a low refractive index material into that it may be possible to supply a material, such as an oxide, a nitride or a fluoride, specifically. For a material with a high refractive index, it may be possible to supply Ta2O5, HfO2, etc. as well as TiO2. Furthermore, for a material of low refractive index, it may be possible to supply MgF2, etc. as well as SiO2. For a method for forming a high refractive index TiO2 layer and a low refractive index SiO2 layer in the second upper Bragg reflector 107, the formation is carried out by sputtering or vacuum deposition, etc. Furthermore, a protective film 140 made of SiN is generally formed and a resin film 141 made of a resin material, such as a polyimide, is formed between tables of the respective surface emitting lasers.
[0058] After that, an upper electrode 111 is formed, which is a p-side electrode. Such an upper electrode 111 is formed to correspond to each surface emitting laser, where each upper electrode 111 is connected to each of the electrode blocks 21 - 24. In addition, a lower electrode 112, which is an n- electrode. side, is formed on a rear face of substrate 101.
[0059] Next, a method for forming the wavelength adjustment layer 130 on the surface emitting laser element in the present embodiment will be described in detail.
[0060] First, the lower Bragg reflector 102, lower spacer layer 103, active layer 104, upper spacer layer 105, upper first Bragg reflector 106, contact layer 110 and a wavelength adjustment area 120, which are made of semiconductor materials, are formed on substrate 101 through epitaxial growth in MOCVD or MBE. Additionally, the wavelength adjustment layer 130 is comprised of the contact layer 110 and a wavelength adjustment area 120, wherein the wavelength adjustment area 120 is formed by laminating the first adjustment layer 121 , the second adjustment layer 122 and the third adjustment layer 123. Here, as mentioned above, the first adjustment layer 121 and the third adjustment layer 123 are made of GaInP, while the second adjustment layer 122 is made of GaAsP.
[0061] Then, a resistor pattern is formed over an area in which the first surface emitting laser 11 is formed. Specifically, a resistor pattern is formed by applying a photoresistor over the third adjustment layer 123 in the wavelength adjustment area 120 and performing light exposure and development thereof by a light exposure device.
[0062] Then, the third adjustment layer 123 over an area in which no resistor pattern has been formed is removed by wet pickling. Specifically, wet pickling is performed by a mixed fluid of hydrochloric acid and water, since the third adjustment layer 123 is made of GaInP. In this way, only the third adjustment layer 123 in an area on which no resistor pattern has been formed is removed to expose a surface of the second adjustment layer 122. Furthermore, it may be possible that such mixed fluid is used to perform pickling of the GaInP constituting the third adjustment layer 123, but it is hardly possible to carry out pickling of the GaAsP constituting the second adjustment layer 122. Such mixed fluid can also be described as a first blasting fluid. After that, the resistor pattern is removed by an organic solvent, etc.
[0063] Then, a resistor pattern is formed over an area in which the first surface emitting laser 11 and the second surface emitting laser 12 are formed. Specifically, a resistor pattern is formed by applying a photoresistor over the third adjustment layer 123 and the second adjustment layer 122 over the wavelength adjustment area 120 and performing light exposure and development of the same by a lighting device. exposure to light.
[0064] Then, the second adjustment layer 122 over an area in which no resistor pattern has been formed is removed by wet pickling. Specifically, wet pickling is performed by a mixed fluid of sulfuric acid, hydrogen peroxide and water, since the second adjustment layer 122 is made of GaAsP. In this way, only the second adjustment layer 122 in an area in which no resistor pattern has been formed is removed to expose a surface of the first adjustment layer 121. Furthermore, it may be possible for such mixed fluid to be used for stripping the GaAsP constituting the second adjustment layer 122, but it is hardly possible to carry out pickling of the GaInP which constitutes the first adjustment layer 121. Such mixed fluid can be described as a second pickling fluid. After that, the resistor pattern is removed by an organic solvent, etc.
[0065] Then, a resistor pattern is formed over an area in which the first surface emitting laser 11, the second surface emitting laser 12 and the third surface emitting laser 13 are formed. Specifically, a resistor pattern is formed by applying a photoresistor over the first adjustment layer 121, the second adjustment layer 122, and the third adjustment layer 123 in the wavelength adjustment area 120 and performing light exposure and development the same by a light exposure device.
[0066] Next, the first adjustment layer 121 in an area over which no resistor pattern has been formed is removed by means of wet pickling. Specifically, the first adjustment layer 121 in an area over which no resistor pattern has been formed is removed by the first pickling fluid. In this way, only the first adjustment layer 121 in an area over which no resistor pattern has been formed is removed to expose a surface of the contact layer 110. Thereafter, the resistor pattern is removed by an organic solvent, etc. .
[0067] Then, the second upper Bragg reflector 107 is formed. Specifically, the formation is carried out by alternately laminating a dielectric film made of a high refractive index material and a dielectric film made of a low refractive index material, which are composed of an oxide, a nitride, a fluoride, etc. ., with each having a predetermined film thickness due to sputtering, etc. In addition, it may also be possible to form the upper second Bragg reflector 107 by laminating and molding semiconductor materials having different refractive indices.
[0068] Thereby, it may be possible to form the wavelength adjustment layer 130 and second upper Bragg reflector 107 on the surface emitting laser element in the present embodiment.
[0069] In the present embodiment, Al is not included in any of the first adjustment layer 121, second adjustment layer 122, and third adjustment layer 123 that constitute the wavelength adjustment area 120 in the wavelength adjustment layer. 130 wave and therefore oxidation, etc. they hardly occur after blasting, so it may be possible to maintain a clean surface condition after blasting. That is, it can be extremely easy for Al to corrode and therefore when one of the first adjustment layer 121, second adjustment layer 122 and third adjustment layer 123 is formed of a material that includes Al, the surface state after performing wet blasting, etc. it may be poor in that, even though the upper second Bragg reflector 107 is formed over it, delamination may occur or its thickness may be inhomogeneous. However, the wavelength adjustment area 120 on the surface emitting laser element in the present embodiment is formed of a material that does not include Al and therefore Al corrosion, etc. does not occur and such a problem cannot occur.
[0070] In addition, the wavelength adjustment area 120 in the wavelength adjustment layer 130 in the present embodiment is made of alternating GaAsP and GaInP and, when wet blasting is conducted using two types of blasting fluids, it may be mutually possible to blast them and it may not be possible to blast another. Blasting is carried out using two types of such blasting fluids, whereby the surface after blasting can be flat and it can be possible to carry out molding to a predetermined thickness without excessive blasting. In this way, it may be possible to obtain a surface-emitting laser element with a stable characteristic.
[0071] Additionally, although a case of a combination of GaAsP and GaInP has been described in the description(s) for the present embodiment, a combination with other material that does not include Al may be provided, for which it is further provided a different pickling fluid and is a semiconductor material with a band amplitude energy greater than an oscillating wavelength. For 894.6 nm, which is an oscillating wavelength in the present embodiment, for example, GaInAsP/GaInP, GaAs/GaInP, GaAs /GaInAsP, GaAsP/GaInAsP, etc. are provided as a combination of such semiconductor materials . Furthermore, N or Sb can be added to them, such as GaAsN/GaInP, GaInNAs/GaInP, GaAsSb/GaInP, etc.
[0072] As described above, it may be possible to form multiple surface emitting lasers to emit light with different wavelengths onto a substrate 101 in the surface emitting laser element in the present embodiment. Thus, even if a variation in film thickness of a semiconductor layer, etc. occurs in the fabrication of a surface emitting laser element, a light emission with a wavelength closer to a desired wavelength is selected from the first laser 11 to the fourth surface emitting laser 14, whereby it may be possible to obtain a semiconductor laser with a desired wavelength with ease. In this way, it may be possible to manufacture a surface emitting laser element having a surface emitting laser which emits light of a predetermined wavelength at a low cost.
[0073] Additionally, when the contact layer 110 is formed over the wavelength adjustment area 120, an amount of electrical current capable of flowing in each surface emitting laser, etc. it is varied according to the thickness of the 120 wavelength adjustment area, and an electrical characteristic and light emitting characteristic of each surface emitting laser can also be greatly different. Furthermore, when electrical current flows in the wavelength adjustment area 120, an electrical resistance can be increased by a band discontinuity at an interface of each layer. However, the contact layer 110 is formed under the wavelength adjustment area 120 in the surface emitting laser element in the present embodiment, whereby the electrical current injected into the surface emitting laser cannot pass through the surface emitting laser adjustment area. 120 wavelength and resistance, etc. cannot be changed depending on the thickness of the 120 wavelength adjustment area.
[0074] Next, an advantage of the upper first Bragg reflector 106 formed between the wavelength adjustment layer 130 and a resonator area will be described. For example, when a wavelength adjustment layer is formed in a resonator area having an optical length of one wavelength and when four wavelengths are provided with a central wavelength of 895 nm and a length range of 1 nm, the layer making up the wavelength adjustment layer is provided with 1.3 nm, where it can be extremely difficult to perform uniform molding onto a tile surface with a current crystal growth technique. Thus, the first upper Bragg reflector 106, which is a part of the upper Bragg reflector, is formed between the area of the resonator and the wavelength adjustment layer 130 in the present embodiment. Specifically, the upper first Bragg reflector 106 is formed by laminating 6 pairs of a high refractive index n-Al0.1Ga0.9As layer and a low refractive index n-Al0.9Ga0.1As layer in such a manner. that the optical film thickness of each layer is À/4. In addition, contact layer 110 is formed over first upper Bragg reflector 106 and wavelength adjustment area 120 is formed over contact layer 110. First adjustment layer 121, second adjustment layer 122, and third adjustment layer 123 constituting the wavelength adjustment area 120 are formed in such a way that the thickness of the GaInP/GaAsP/GaInP films are 16 nm/ 16 nm/16 nm, respectively, where it may be possible perform sufficiently uniform fabrication with current crystal growth technique. Thus, it may be possible to reduce wavelength range deviations between surface emitting lasers.
[0075] In addition, it may also be possible to reduce electrical resistance simultaneously when forming such a structure. That is, the second upper Bragg reflector 107, which is a dielectric, is formed on top of the wavelength adjustment layer 130 and the upper electrode 111 is formed in an adjacency thereof where, when an adjustment layer of wavelength is provided in a resonator area, it may be necessary to provide a layer of AlAs that is selectively oxidized in a position close to a contact layer in view of the layer structure and the electrical current channel can be narrowed to increase the electrical resistance. Here, the first upper Bragg reflector 106 is formed between the wavelength adjustment layer 130 (wherein the contact layer 110 is formed under the wavelength adjustment area 120) and the area of the resonator in the present embodiment. , whereby it may be possible to extend the electrical current channel and it may be possible to reduce electrical resistance.
[0076] Additionally, it may be possible to further increase a film thickness of each layer in the wavelength adjustment area 120 in the wavelength adjustment layer 130 when the upper second Bragg reflector 107 has seven or more pairs , whereby uniform manufacturing can be facilitated and electrical resistance can also be reduced. However, if the number of pairs in the second upper Bragg reflector 107 is increased, the optical thickness of the wavelength adjustment layer 130 may be greater than A/4 and the overall reflectance of the upper reflector may be degraded. Thus, an ideal number of a pair(s) may be present for the second upper Bragg reflector 107, so it may be possible for the optical thickness of the wavelength adjustment layer 130 to be close to À/4.
[0077] Next, the wavelength adjustment layer thickness 130 will be described. When the optical thickness P of the wavelength adjustment layer 130 is X/4 <P <X/2, as illustrated in Figure 4A, it may be possible that the reflectances of the upper Bragg reflectors in the first surface emitting laser 11, second surface emitting laser 12, third surface emitting laser 13, and fourth surface emitting laser 14 are globally constant as illustrated in Figure 4B. Furthermore, L1 is a surface of the wavelength adjusting layer 130 in the first surface emitting laser 11 and L2 is a surface of the wavelength adjusting layer 130 in the second surface emitting laser 12, while L3 is a surface of the wavelength adjusting layer 130 in the third surface emitting laser 13 and L4 indicates a surface of the wavelength adjusting layer 130 in the fourth surface emitting laser 14.
[0078] On the other hand, when the optical thickness P of the wavelength adjustment layer 130 is X/2 < P, as illustrated in Figure 5A, the reflectances of the upper Bragg reflectors in the first surface emitting laser 11, second Surface emitting laser 12, third surface emitting laser 13 and fourth surface emitting laser 14 can be very different from each other, as illustrated in Figure 5B.
[0079] Furthermore, when the optical thickness P of the wavelength adjustment layer 130 is P <À/4, as illustrated in Figure 6A, the reflectances of the upper Bragg reflectors in the first surface emitting laser 11, second laser surface emitter 12, third surface emitter laser 13 and fourth surface emitter laser 14 can be very different from each other, as illustrated in Figure 6B.
[0080] As described above, it is preferable that the optical thickness P of the wavelength adjustment layer 130 be À/4 <P <À/2 and, if such a subject is generalized, it is preferable that it be (2N -1)À/4 <P < NO./2. Furthermore, N represents a positive integer and, if applying a light absorption influence when causing an adverse effect, such as a threshold increase of an electric current, is taken into account, it is preferable that N be low.
[0081] Furthermore, when the thickness of the wavelength adjustment area 120 is small and the sum of the optical thicknesses of the wavelength adjustment area 120 and the contact layer 110 is less than À/4, an area of phase adjustment 131 can be provided for the wavelength adjustment layer 130, as illustrated in Figure 7A. Thus, it may be possible for the optical thickness P of the wavelength adjustment layer 130 to be À/4 <P <À/2 and, in general, (2N-1)À/4 <P < 2NÀ/4 and, as illustrated in Figure 7B, it may be possible that the reflectances of the upper Bragg reflectors in the first surface emitting laser 11, second surface emitting laser 12, third surface emitting laser 13 and fourth surface emitting laser 14 are generally constant. . Additionally, in such a case, the wavelength adjustment layer 130 is constituted by the contact layer 110, the wavelength adjustment area 120 and the phase adjustment area 131. In addition, the phase adjustment area 131 is made of AlGaAs, wherein the phase adjustment area 131 may be formed under the contact layer 110 as illustrated in Figure 7A or the phase adjustment area 131 may be formed between the contact layer 110 and an area of wavelength adjustment 120, as illustrated in Figure 8. In addition, a phase adjustment area 131a may consist of a laminated film onto which GaAsP and GaInP are alternately laminated, as illustrated in Figure 9.
[0082] Furthermore, the surface emitting laser element in the present embodiment has a structure in which multiple films are formed in the wavelength adjustment area 120, wherein it is preferable to form the wavelength adjustment layer 130 of such that when the number of layers of (a) formed film(s) (adjustment layer(s)) is M (where M is a positive integer), a position at which the film thickness optical of the same is X/4 is a ) (M+1)/2)-th film (adjustment layer) from a top of the same in a case where M is an odd number or one (M/2) -th or ((M/2)+1)-th film (adjustment layer) from a top of it in a case where M is an even number. [Second Achievement]
[0083] Next, a surface emitting laser element in a second embodiment will be described. Furthermore, the surface emitting laser element in the present embodiment is a surface emitting laser for a wavelength of 894.6 nm and a structure in which a wavelength adjustment area is provided over a lower Bragg reflector. . As illustrated in Figure 10 and Figure 11, a surface emitting laser element 150 in the present embodiment has multiple surface emitting lasers and specifically has a first surface emitting laser 151, a second surface emitting laser 152, a third laser surface emitter 153 and a fourth surface emitter laser 154. Furthermore, Figure 10 has been simplified for purposes of an explanation of the present embodiment, in which representation of a contact layer, etc., has been conveniently omitted. In addition, Figure 11 is a cross-sectional diagram provided when cutting along a dotted/dashed line 10A-10B in Figure 10.
[0084] The surface emitting laser element 150 in the present embodiment is formed on a 300 µm square semiconductor chip, wherein each of the first surface emitting laser 151, second surface emitting laser 152, third surface emitting laser 153 and fourth surface emitting laser 154 formed on such a semiconductor chip is connected to an electrode block provided to correspond thereto. Specifically, an electrode block 161 is connected to the first surface emitting laser 151 and an electrode block 162 is connected to the second surface emitting laser 152, while an electrode block 163 is connected to the third surface emitting laser 153 and a electrode block 164 is connected to the fourth surface emitting laser 154.
[0085] Additionally, the first surface emitting laser 151, second surface emitting laser 152, the third surface emitting laser 153 and the fourth surface emitting laser 154 provide mutually different wavelengths of emitted light. That is, an A.1 wavelength emitted from the first surface emitting laser 151, an A.2 wavelength emitted from the second surface emitting laser 152, an A.3 wavelength emitted from the third surface emitting laser 153 and a wavelength À.4 emitted from the fourth surface emitting laser of 154 are mutually different wavelengths.
[0086] Furthermore, the surface emitting laser element in the present embodiment is to obtain a surface emitting laser with an oscillating wavelength of 894.6 nm, wherein four surface emitting lasers are formed on a semiconductor chip. 300 µm square (substrate) . Since it may be possible to form multiple surface emitting lasers in a narrow area on a surface emitting laser element, there is little variation in the position of a light emitting point, even when a surface emitting laser to conduct light emission is turned on.
[0087] For the surface emitting laser element in the present embodiment, materials with different refractive indices are alternately laminated onto and molded onto a substrate 101 made of a semiconductor, etc., to form a first lower Bragg reflector 172 and a phase adjustment layer 173, a wavelength adjustment area 180, a second lower Bragg reflector 174, a lower spacer layer 103, an active layer 104 and an upper spacer layer 105 are formed over the first lower Bragg reflector 172. An upper Bragg reflector 176 and a contact layer 177 are formed on the upper spacer layer 105. In addition, an upper electrode 178 is formed over and connected to the contact layer 177 and a lower electrode 112 is formed on a face substrate 101. Furthermore, a wavelength adjustment layer 190 is constituted by the wavelength adjustment area 180 and the phase adjustment layer 17 3 in the present embodiment, while a lower Bragg reflector 170 is comprised of the first lower Bragg reflector 172, the phase adjustment area 173, a wavelength adjustment area 180, and the second lower Bragg reflector 174.
[0088] Additionally, first lower Bragg reflector 172, phase adjustment area 173, wavelength adjustment area 180, second lower Bragg reflector 174, lower spacer layer 103, active layer 104, upper spacer layer 105, upper Bragg reflector 176 and contact layer 177, which are semiconductor layers formed on substrate 101, are formed of semiconductor epitaxial growth materials. Specifically, such semiconductor layers are formed by epitaxial growth in MOCVD or MBE.
[0089] In the surface emitting laser element in the present embodiment, the thicknesses of the respective wavelength adjustment areas 180 in the first surface emitting laser 151, second surface emitting laser 152, third surface emitting laser 153 and fourth laser surface emitter 154 are different from each other. Specifically, the wavelength adjustment area 180 is comprised of a first adjustment layer 181, a second adjustment layer 182, and a third adjustment layer 183. In the present embodiment, the first adjustment layer 181 and the third adjustment layer. adjustment 183 are made of GaInP, while the second adjustment layer 182 is made of GaAsP. Also, materials to make the first adjustment layer 181, second adjustment layer 182, and third adjustment layer 183 can be opposed to this.
[0090] Thus, the thicknesses of the wavelength adjustment areas 180, i.e. the thicknesses of the wavelength adjustment layers 190, in the first surface emitting laser 151, second surface emitting laser 152, third emitting laser of surface emitting 153 and fourth surface emitting laser 154 are different in the surface emitting laser element in the present embodiment.
[0091] Specifically, the first adjustment layer 181, the second adjustment layer 182, and the third adjustment layer 183 are formed over the wavelength adjustment area 180 in the first surface emitting laser 151, wherein light with a wavelength A.1 is emitted, which corresponds to a thickness of the wavelength adjustment layer 190 which includes such wavelength adjustment area 180.
[0092] Furthermore, the first adjustment layer 181 and the second adjustment layer 182 are formed in the wavelength adjustment area 180 in the second surface emitting laser 152, wherein light with a wavelength of A.2 is emitted, which corresponds to a thickness of the wavelength adjustment layer 190 which includes such wavelength adjustment area 180.
[0093] Furthermore, the first adjustment layer 181 is formed in the wavelength adjustment area 180 in the third surface emitting laser 153, wherein light with a wavelength of A.3 is emitted, which corresponds to a thickness of the wavelength adjustment layer 190 which includes such wavelength adjustment area 180.
[0094] Furthermore, the wavelength adjustment area 180 is not formed in the fourth surface emitting laser 154 and therefore light with a wavelength A.4 is emitted, which corresponds to a thickness of the layer. wavelength adjustment 190 in a case where the wavelength adjustment area 180 is not formed.
Thus, it may be possible to change the thicknesses of the wavelength adjustment areas 180 in the first surface emitting laser 151, second surface emitting laser 152, third surface emitting laser 153 and fourth surface emitting laser 154 little to little and it may be possible to emit light, with each wavelength corresponding to a thickness of at least one or each of the wavelength adjustment areas 180.
[0096] In the present embodiment, an n-GaAs substrate is used for substrate 101. In addition, lower Bragg reflector 170 is formed by laminating 35.5 pairs of an n-Al0.1Ga0.9As layer of material of high refractive index and an n-Al0.1Ga0.9As layer of low refractive index material such that the optical film thickness of each layer is A./4.
[0097] As described above, the lower Bragg reflector 170 is constituted by the first lower Bragg reflector 172, the phase adjustment area 173, a wavelength adjustment area 180, and the second lower Bragg reflector 174 over the substrate 101. Consequently, the phase adjustment area 17 and the wavelength adjustment area 180 are formed within the lower Bragg reflector 170. Furthermore, in the present embodiment, the formation is performed in such a way that the sum of the optical film thickness of a phase adjustment area 173 and half the optical film thickness of the wavelength adjustment area 180, that is, the optical film thickness from below the phase adjustment area 173 to a central portion of the wavelength adjustment area 180, is À/4, as illustrated in Figure 12.
[0098] The active layer 104 consisting of a quantum cavity layer of GaInAs / a barrier layer of GaInPAs is formed on the lower Bragg reflector 170 through the lower spacer layer 103 made of Al0.2Ga0.8As. The upper spacer layer 105 made of Al0.2Ga0.8As is formed over the active layer 104. In addition, a resonator area having an optical thickness of one wavelength is constituted by the lower spacer layer 103, the active layer 104 and the upper spacer layer 105.
[0099] Upper Bragg reflector 176 is formed by laminating 24 pairs of a layer of high refractive index n-Al0.1Ga0.9As material and a layer of low refractive index n-Al0.9Ga0.1As material. refraction such that the optical film thickness of each layer is À/4. One of the low refractive index layers of the upper Bragg reflector 176 is comprised of an electric current narrowing layer 108 made of AlAs, wherein a peripheral portion of the electric current narrowing layer 108 is selectively oxidized to form an area of selective oxidation 108a and an unoxidized electrical current narrowing area 108b is formed in a central portion thereof. In addition, contact layer 177 made of p-GaAs is formed on top Bragg reflector 176.
[0100] When the sum of a value of an optical film thickness of a phase adjustment area 173 and a value of half an optical film thickness of a wavelength adjustment area of 180 is about À./ 4, as illustrated in Figure 12A, it may be possible that the reflectances of the lower Bragg reflectors in the first surface emitting laser 151, second surface emitting laser 152, third surface emitting laser 153 and fourth surface emitting laser 154 are generally constant. , as illustrated in Figure 12B. Furthermore, L1 is a surface of the wavelength adjusting layer 190 in the first surface emitting laser 151 and L2 is a surface of the wavelength adjusting layer 190 in the second surface emitting laser 152, while L3 is a surface of wavelength adjusting layer 190 in third surface emitting laser 153 and L4 indicates a surface of wavelength adjusting layer 190 in fourth surface emitting laser 154.
[0101] Each surface emitting laser in a surface emitting laser element in the present embodiment has a table structure, wherein such table structure is formed by removing a semiconductor layer between the surface emitting lasers to be formed by virtue of pickling the dry, etc. After a table structure is formed, heat treatment in water vapor is carried out to oxidize the electrical current narrowing layer 108 from a periphery of the table structure, whereby the selective oxidation area 108a (an oxidized area) over a portion peripheral and non-oxidized electrical current narrowing area 108b over a central portion are formed. That is, the electrical current narrowing layer 108 is comprised of the oxidized selective oxidation area 108a and the unoxidized electrical current narrowing area 108b to provide an electrical current narrowing structure. Specifically, AlAs constituting the electrical current narrowing layer 108 is subjected to a heat treatment in water vapor to be oxidized to form AlxOy, the AlxOy thus formed constituting the selective oxidation area 108a. Here, the electric current narrowing area 108b is made of unoxidized AlAs in the electric current narrowing layer 108. In addition, the shape, viewed from an upper part of the table structure, can be formed to have a circular shape. or it can be formed to have a shape such as an elliptical shape, a square shape or a rectangular shape.
[0102] Furthermore, a protective film 140 made of SiN is generally formed and a resin film 141 is formed between tables of the respective surface emitting lasers by incorporating a resin material such as a polyimide. After that, an upper electrode 178 is formed, which is an electrode on the p-side. Such upper electrode 178 is formed to correspond to each surface emitting laser, where each upper electrode 178 is connected to each of the electrode blocks 161-164.
[0103] Specifically, the protective film 140 made of SiN is formed and the resin layer 141 is formed by incorporating and leveling a resin material, such as a polyimide resin, between tables of the respective surface emitting lasers. Thereafter, protective film 140 and resin layer 141 on contact layer 177 are removed to expose contact layer 117 and upper electrode 178 is formed over contact layer 177. which is an electrode on the n-side, is formed on a back face of substrate 101.
[0104] The surface emitting laser element in the present embodiment emits laser light on an opposite side of a side of the substrate 101. Additionally, it may be possible for the protective film 140 made of SiN to protect a side face and a lower face of a layer including Al which appears by the pickling table and is easily corroded by virtue of a dielectric thereof in the present embodiment and therefore it may be possible to improve reliability.
[0105] Next, an advantage of the second lower Bragg reflector 174 formed between the wavelength adjustment area 180 and a resonator will be described. When a wavelength adjustment area is formed in a resonator having an optical length of one wavelength and when four wavelengths are provided with a central wavelength of 958 nm and a wavelength range of 1 nm , a layer of the adjustment layers that make up the wavelength adjustment layer is provided at about 1 nm, where it can be extremely difficult to perform uniform formation on a wafer surface with a current crystal growth technique.
[0106] Consequently, the second lower Bragg reflector 174, which is a part of the lower Bragg reflector 170, is formed between the resonator and the wavelength adjustment area 180 in the present embodiment. Specifically, the second lower Bragg reflector 174 is formed by laminating 10 pairs of a high refractive index n-Al0.1Ga0.9As layer and a low refractive index n-Al0.9Ga0.1As layer in a manner such that the optical film thickness of each layer is A./4. Thus, it may be possible that the film thicknesses of GaInP/GaAsP/GaInP in the first adjustment layer 181, second adjustment layer 182, and third adjustment layer 183 constituting a wavelength adjustment area 180 are 16 nm /16 nm/16 nm, respectively, and it may be possible to carry out sufficiently homogeneous fabrication with the current crystal growth technique, whereby it may be possible to reduce the deviation of the wavelength range similar to the first embodiment.
[0107] In addition, when the second lower Bragg reflector 174 is composed of eleven or more pairs, it may be possible that the film thickness of each layer in the wavelength adjustment area 180 is even greater and, consequently, may be possible to further improve uniformity. However, if the number of pairs in the second lower Bragg reflector 174 is increased, as illustrated in Figure 13A and Figure 13B, the optical film thickness of a wavelength adjustment area 180 may be much larger than À /4 (optical film thickness of a Bragg reflector) and therefore the overall reflectance of the lower Bragg reflector 170 can be degraded, which is not preferable. Thus, an ideal number of pairs may be present for the second lower Bragg reflector such that an optical thickness of the wavelength adjustment area 180 is close to À/A.
[0108] On the other hand, when the sum of an optical film thickness value of a phase adjustment area 173 and a value of half the optical film thickness of a wavelength adjustment area 180 is X/4 or larger, as illustrated in Figure 13A, a lower Bragg reflector reflectance in each of the first surface emitting laser 151, second surface emitting laser 152, third surface emitting laser 153 and fourth surface emitting laser 154 may be large. , as illustrated in Figure 13B. However, in the present embodiment, it may be possible to improve the reflectance uniformity of each lower Bragg reflector, as illustrated in Figure 12B.
[0109] Next, a method for forming the wavelength adjustment area 180 in the surface emitting laser element in the present embodiment will be described in detail.
[0110] First, the first lower Bragg reflector 172, the phase adjustment area 173 and the wavelength adjustment area 180, which are made of semiconductor materials, are formed on the substrate 101 by means of epitaxial growth in MOCVD or MBE. As described above, the wavelength adjustment layer 190 is constituted by the phase adjustment area 173 and the wavelength adjustment area 180, wherein the wavelength adjustment area 180 is formed by laminating the first. adjustment layer 181, the second adjustment layer 182, and the third adjustment layer 183. Also, the first adjustment layer 181 and the third adjustment layer 183 are made of GaInP, while the second adjustment layer 182 is made of of GaAsP.
[0111] Next, a resistor pattern is formed over an area in which the first surface emitting laser 151 is formed. Specifically, a resistor pattern is formed by applying a photoresistor over the third adjustment layer 183 in the wavelength adjustment area 180 and performing light exposure and development thereof by a light exposure device.
[0112] Then, the third adjustment layer 183 over an area in which no resistor pattern has been formed is removed by wet pickling. Specifically, wet pickling is performed by a mixed fluid of hydrochloric acid and water, as the third adjustment layer 183 is made of GaInP. In this way, only the third adjustment layer 183 over an area in which no resistor pattern has been formed is removed by exposing a surface of the second adjustment layer 182. Additionally, it may be possible that such mixed fluid is used to perform pickling of the GaInP which constitutes the third adjustment layer 183, but it can hardly be possible to perform pickling of GaAsP which constitutes the second adjustment layer 182. Such mixed fluid can also be described as a first pickling fluid. After that, the resistor pattern is removed by an organic solvent, etc.
[0113] Then, a resistor pattern is formed over an area in which the first surface emitting laser 151 and the second surface emitting laser 152 are formed. Specifically, a resistor pattern is formed by applying a photoresistor to the third adjustment layer 183 and second adjustment layer 182 of the wavelength adjustment area 180 and performing light exposure and development thereof by a light exposure device .
[0114] Then, the second adjustment layer 182 in an area in which no resistor pattern has been formed is removed by wet pickling. Specifically, wet pickling is performed by a mixed fluid of sulfuric acid, hydrogen peroxide and water, since the second adjustment layer 182 is made of GaAsP. In this way, only the second adjustment layer 182 over an area in which no resistor pattern has been formed is removed to expose a surface of the first adjustment layer 181. Furthermore, it may be possible for such mixed fluid to be used to perform pickling. of the GaAsP which constitutes the second adjustment layer 182, but it is hardly possible to perform pickling of the GaInP which constitutes the first adjustment layer 181. Such mixed fluid can be described as a second pickling fluid. After that, the resistor pattern is removed by an organic solvent, etc.
[0115] Then, a resistor pattern is formed over an area in which the first surface emitting laser 151, the second surface emitting laser 152 and the third surface emitting laser 153 are formed. Specifically, a resistor pattern is formed by applying a photoresistor to the first adjustment layer 181, second adjustment layer 182, and third adjustment layer 183 in the wavelength adjustment area 180 and performing light exposure and development by a light exposure device.
[0116] Next, the first adjustment layer 181 over an area in which no resistor pattern has been formed is removed by wet pickling. Specifically, the first adjustment layer 181 over an area in which no resistor pattern has been formed is removed by the first pickling fluid. In this way, only the first adjustment layer 181 over an area in which no resistor pattern has been formed is removed to expose a surface of the phase adjustment layer 173. After that, the resistor pattern is removed by an organic solvent, etc.
[0117] Then, the second lower Bragg reflector 174 is formed. Thereby, it may be possible to form the lower Bragg reflector 170 by including the wavelength adjustment area 180 in the surface emitting laser element in the present embodiment.
[0118] In the present embodiment, Al is not included in any of the first adjustment layer 181, second adjustment layer 182, and third adjustment layer 183 that constitute the wavelength adjustment area 180 in the wavelength adjustment layer of wave 190 and therefore oxidation, etc. it hardly occurs after blasting, so it may be possible to maintain a clean surface condition after blasting. That is, it can be extremely easy for Al to corrode and therefore when one of the first adjustment layer 181, second adjustment layer 182, and third adjustment layer 183 is formed of a material that includes Al, a surface condition after performing wet blasting, etc. it may be poor in that, even though the upper second Bragg reflector 174 is formed over it, delamination may occur or its thickness may be inhomogeneous. However, the wavelength adjustment area 180 in the surface emitting laser element in the present embodiment is formed of a material that does not include Al and therefore Al corrosion, etc. does not occur and such a problem cannot occur.
[0119] In addition, the wavelength adjustment area 180 in the wavelength adjustment layer 190 in the present embodiment is made of alternating GaAsP and GaInP, and when blasting is conducted using two types of blasting fluids, it can be It is mutually possible to blast the same and it may not be possible to blast another. Blasting is carried out using two types of such blasting fluids, whereby the surface after blasting may be flat and it may be possible to carry out molding with a predetermined thickness of excessive blasting. In this way, it may be possible to obtain a surface-emitting laser element with a stable characteristic.
[0120] Additionally, although a case of a combination of GaAsP and GaInP has been described in the description(s) for the present embodiment, a combination with other material that does not include Al may be provided, for which it is further provided a different pickling fluid and is a semiconductor material with a band amplitude energy greater than an oscillating wavelength. For 894.6 nm, which is an oscillating wavelength in the present embodiment, for example, GaInAsP/GaInP, GaAs/GaInP, GaAs /GaInAsP, GaAsP/GaInAsP, etc. are provided as a combination of such semiconductor materials . Furthermore, N or Sb can be added to them, such as GaAsN/GaInP, GaInNAs/GaInP, GaAsSb/GaInP, etc.
[0121] As described above, it may be possible to form multiple surface emitting lasers to emit light with different wavelengths onto a substrate 101 in the surface emitting laser element in the present embodiment. Thus, even if a variation in film thickness of a semiconductor layer, etc. occurs in the fabrication of a surface emitting laser element, a light emission having a wavelength closer to a desired wavelength is selected from the first laser 151 to the fourth surface emitting laser 154, whereby it may be possible to obtain a semiconductor laser with a desired wavelength with ease. In this way, it may be possible to manufacture a surface emitting laser element having a surface emitting laser which emits light of a predetermined wavelength at a low cost.
[0122] In addition, content(s) other than as described above is/are similar to that(s) of the first embodiment. [Third Achievement]
[0123] Next, a third embodiment will be described. A surface emitting laser in the present embodiment is a 12-channel surface emitting laser for a wavelength of 780 nm and will be described in reference to Figure 14 and Figure 15. In addition, Figure 14 is a top view of a laser surface emitter in the present embodiment, while Figure 15A is a cross-sectional diagram provided when cutting along a dotted/dashed line 14A-14B in Figure 14 and Figure 15B is a cross-sectional diagram provided when cutting along of a dotted/dashed line 14C-14D in Figure 14.
[0124] A surface emitting laser element 200 in the present embodiment is formed on a 300 µm square semiconductor chip, wherein each of the first surface emitting laser 201, second surface emitting laser 202, third surface emitting laser 203 , fourth surface emitting laser 204, fifth surface emitting laser 205, sixth surface emitting laser 206, seventh surface emitting laser 207, eighth surface emitting laser 208, ninth surface emitting laser 209, tenth surface emitting laser 210, eleventh 211 surface emitting laser and twelfth 212 surface emitting laser formed on such a semiconductor chip are connected to an electrode block provided to correspond thereto.
[0125] Specifically, an electrode block 221 is connected to the first surface emitting laser 201, an electrode block 222 is connected to the second surface emitting laser 202, an electrode block 223 is connected to the third surface emitting laser 203 , an electrode block 224 is connected to the fourth surface emitting laser 204, an electrode block 225 is connected to the fifth surface emitting laser 205, an electrode block 226 is connected to the sixth surface emitting laser 206, an electrode block 227 is connected to the seventh surface emitting laser 207, an electrode block 228 is connected to the eighth surface emitting laser 208, an electrode block 229 is connected to the ninth surface emitting laser 209, an electrode block 230 is connected to the tenth surface emitting laser 210, an electrode block 231 is connected to the eleventh surface emitting laser 211, and an electrode block 232 is connected. attached to the twelfth surface emitting laser 212.
[0126] In addition, the first surface emitting laser 201, the second surface emitting laser 202, the third surface emitting laser 203, the fourth surface emitting laser 204, the fifth surface emitting laser 205, the sixth emitting laser 206 surface emitting laser, seventh surface emitting laser 207, eighth surface emitting laser 208, ninth surface emitting laser 209, tenth surface emitting laser 210, eleventh surface emitting laser 211, and twelfth surface emitting laser 212 provide light emitted with mutually different wavelengths. That is, an A.1 wavelength emitted from the first surface emitting laser 201, an A.2 wavelength emitted from the second surface emitting laser 202, an A.3 wavelength emitted from the third surface emitting laser 203, a wavelength λ4 emitted from the fourth surface emitting laser 204, a wavelength λ5 emitted from the fifth surface emitting laser 205, a wavelength λ. 6 emitted from the sixth surface emitting laser 206, a wavelength À.7 emitted from the seventh surface emitting laser 207, an A.8 wavelength emitted from the eighth surface emitting laser 208, a A.9 wavelength emitted from the ninth surface emitting laser 209, an A.10 wavelength emitted from the tenth surface emitting laser 210, an A.11 wavelength emitted from the eleventh laser 211 surface emitter and a compress 12 wavelength emitted from the twelfth surface emitting laser 212 are mutually different wavelengths.
[0127] For the surface emitting laser element in the present embodiment, a lower Bragg reflector 102, a lower spacer layer 103, an active layer 104, an upper spacer layer 105 and a first upper Bragg reflector 106 are formed by a substrate 101 made of a semiconductor, etc. and a first wavelength adjusting layer 250, an upper second Bragg reflector 271, a second wavelength adjusting layer 260, an upper third Bragg reflector 272, a contact layer 240 and an upper electrode 111 are formed on the first upper Bragg reflector 106. Furthermore, the contact layer 240 is connected to the upper electrode 111 and a lower electrode 112 is formed on a back face of the substrate 101. Furthermore, in the present embodiment, the lower Bragg reflector 102, lower spacer layer 103, active layer 104, upper spacer layer 105, upper first Bragg reflector 106, first wavelength adjustment layer 250, second upper Bragg reflector 271, second wavelength adjustment layer 260, upper third Bragg reflector 272 and contact layer 240, which are semiconductor layers formed on substrate 101, are formed by growing semiconductor materials. epitaxial treatment. Specifically, such semiconductor layers are formed by epitaxial growth in MOCVD or MBE. Furthermore, in the present embodiment, an upper Bragg reflector is comprised of the first upper Bragg reflector 106, first wavelength adjusting layer 250, second upper Bragg reflector 271, second wavelength adjusting layer 260, and third Upper Bragg reflector 272. In addition, the first wavelength adjustment layer 250 and the second wavelength adjustment layer 260 may be formed within the lower Bragg reflector 102.
[0128] In the present embodiment, an n-GaAs substrate is used for the substrate 101. In addition, the lower Bragg reflector 102 is formed by laminating 35.5 pairs of a layer of n-Al0.1Ga0.9As material high refractive index and a layer of low refractive index n-Al0.9Ga0.1As material such that the optical film thickness of each layer is X/4.
[0129] The active layer 104 consisting of a quantum cavity layer of GaInAs / a barrier layer of GaInPAs is formed on the lower Bragg reflector 102 through the lower spacer layer 103 made of Al0.2Ga0.8As. The upper spacer layer 105 made of Al0.2Ga0.8A and the upper first Bragg reflector 106 are formed over the active layer 104. In addition, a resonator area having an optical thickness of one wavelength is constituted by the lower spacer layer 103, active layer 104 and upper spacer layer 105.
[0130] The first upper Bragg reflector 106 is formed by laminating 3.5 pairs of a layer of high refractive index n-Al0.1Ga0.9As material and a layer of n-Al0.9Ga0.1As material of low refractive index such that the optical film thickness of each layer is À/4. In addition, one of the lower refractive index layers of the upper Bragg reflector 106 is constituted by an electric current narrowing layer 108 made of AlAs which is not shown in Figure 15A and Figure 15B.
[0131] The first wavelength adjustment layer 250 is formed on top of the first Bragg reflector 106. The first wavelength adjustment layer 250 is formed by laminating a phase adjustment area 254 made of p-Al0 ,1Ga0.9As, a first adjustment layer 251 made of GaInP, a second adjustment layer 252 made of GaAsP, and a third adjustment layer 253 made of GaInP.
[0132] The second upper Bragg reflector 271 is formed over the first wavelength adjustment layer 250. The second upper Bragg reflector 271 is formed by laminating 4.5 pairs of an n-Al0.1Ga0.9As layer high refractive index and a low refractive index n-Al0.9Ga0.1As layer, such that the optical film thickness of each layer is A./4.
[0133] The second wavelength adjustment layer 260 is formed over the second upper Bragg reflector 271. The second wavelength adjustment layer 260 is formed by laminating a phase adjustment area 263 made of p-Al0 ,1Ga0.9As, a fourth adjustment layer 261 made of GaInP and a fifth adjustment layer 262 made of GaAsP.
[0134] The third upper Bragg reflector 272 is formed over the second wavelength adjustment layer 260. The third upper Bragg reflector 272 is formed by laminating 17 pairs of a high n-Al0.1Ga0.9As layer refractive index and an n-Al0,9Ga0,1As layer of low refractive index, such that the optical film thickness of each layer is A./4.
[0135] The contact layer 240 made of p-GaAs is formed on the third upper Bragg reflector 272, while the upper electrode 111 is formed on the contact layer 240 and the lower electrode 112 is formed on a back side of substrate 101.
[0136] In the present embodiment, each surface emitting laser is formed such that the first wavelength adjustment layer 250 and the second wavelength adjustment layer 260 have different thicknesses for each channel to correspond thereto. Additionally, it may be possible to form the first wavelength adjustment layer 250 and the second adjustment layer 260 with different thicknesses by a method similar to the first embodiment. Specifically, it may be possible to carry out the formation through lithography and selective pickling in such a way that the number of wavelength adjustment layers is different. For example, when GaAsP (similar to the case of GaAs) is pickled, it may be possible to use a mixed fluid of sulfuric acid, hydrogen peroxide and water, and when GaInP is pickled, it may be possible to use a mixed fluid of hydrochloric acid and water . After selective etching of the first wavelength adjustment layer 250 is performed, the second upper Bragg reflector 271 and the second wavelength adjustment layer 260 are formed by means of crystal growth, then selective etching of the second layer of wavelength adjustment 260 is performed and the upper third Bragg reflector 272 and the contact layer 240 are formed by means of crystal growth. Furthermore, blasting of a table necessary for the formation of each surface emitter laser is carried out by means of dry blasting. Furthermore, the upper electrode 111, which is an electrode on the p-side of each surface emitting laser, is formed on the contact layer 240 and the lower electrode 112, which is a common electrode on the n-side, is formed on a back face of substrate 101 as illustrated in Figure 15A and Figure 15B. The surface emitting laser element in the present embodiment emits laser light on an opposite side of the substrate 101.
[0137] In Japanese Patent No. 2751814, a wavelength adjustment layer is formed in a resonator area having an optical thickness of one wavelength. For example, in such a case, if the central wavelength is 780 nm and the wavelength range is 3 nm, a layer that constitutes the wavelength adjustment layer is provided with 0.9 nm. Such thickness corresponds to about three atomic layers and it can be difficult to perform uniform formation on a tile surface with current crystal growth technique. Furthermore, if a resonator area with an optical length of wavelength X (X = 2, 3, ...) is given, the film thickness may increase to be 0.9 x X nm for a layer that constitutes the wavelength adjustment layer but, in such a case, the relaxation oscillation wavelength can degrade by X-1/2 times, so that an adverse effect can occur by the fact that such operation in high modulation speed can be difficult, etc.
[0138] On the other hand, in a surface emitting laser element in the present embodiment, the upper first Bragg reflector 106 is formed between a resonator area and the wavelength adjustment layer 250, as illustrated in Figure 15A and Figure 15B. Specifically, the first upper Bragg reflector 106 is formed by alternately laminating 4.5 pairs of a high refractive index p-Al0.1Ga0.9As layer and a low refractive index n-Al0.9Ga0.1As layer between the first wavelength adjustment layer 250 and resonator area. In such a case, even when the oscillation wavelength interval between different light-emitting elements is 3 nm, the thickness of the GaInP/GaAsP/GaInP film constituting the first wavelength adjustment layer 250 is 11, 6 nm/11.6 nm/11.6 nm, respectively, whereby it may be possible to perform sufficiently uniform fabrication with a current crystal growth technique. Thus, it may be possible to reduce the deviation of a wavelength range between surface emitting lasers.
[0139] Furthermore, the second upper Bragg reflector 271 and the second wavelength adjustment layer 260 are additionally formed on the first wavelength adjustment layer 250. In this way, it may be possible to form the first wavelength adjustment layer. 250 wavelength adjustment more evenly, while the oscillation wavelength range is narrowed. Figure 16 illustrates the relationship between the film thickness of the first wavelength adjustment layer 250 and the second wavelength adjustment layer 260 (as indicated by the optical film thicknesses, where À/4 is said to be 0 25) and the wavelength of oscillation in the surface emitting laser element in the present embodiment is as illustrated in Figure 14 and Figures 15A and 15B. In addition, it may be possible to change the film thickness of the first wavelength adjustment layer 250 by performing selective etching of GaInP/GaAsP/GaInP which constitutes the first wavelength adjustment layer 250. Similarly, it may be possible to change the film thickness of the second wavelength adjustment layer 260 when performing selective pickling of the GaInP/GaAsP that constitutes the second wavelength adjustment layer 260.
[0140] As illustrated in Figure 16, when the film thickness of the second wavelength adjustment layer 260 is constant, a film thickness of the first wavelength adjustment layer 250 can be changed, i.e., GaInP/ GaAsP/ GaInP with 11.6 nm / 11.6 nm / 11.6 nm which constitutes the first wavelength adjustment layer 250 can be stripped one by one, so that it may be possible to obtain a wavelength variation of oscillation of about 3 nm. In addition, when the film thickness of the first wavelength adjustment layer 250 is constant, the film thickness of the second wavelength adjustment layer 260 can be changed, ie GaInP/GaAsP with 14nm/11nm constituting the second wavelength adjusting layer 260 can be stripped one by one so that it may be possible to obtain an oscillation wavelength range of about 1 nm. Thus, as illustrated in Figure 15A and Figure 15B, the film thickness of the first wavelength adjusting layer 250 and the second wavelength adjusting layer 260 can be changed in 4 levels and 3 levels, respectively, where it can be possible to form a surface emitting laser with different wavelengths of oscillation in 4 x 3 = 12 levels. In addition, the film thickness of the first wavelength adjustment layer 250 and the second wavelength adjustment layer 260 can be adjusted, as illustrated in Figure 16, by which it can be possible for all twelve emitting lasers. oscillate at different wavelengths with a range of about 1 nm.
[0141] Next, the phase adjustment area 254 formed over the first wavelength adjustment layer 250 will be described. Reflectance is illustrated in Figure 17B, in a case where the first adjustment layer 251, the second adjustment layer 252 and the third adjustment layer 253 are formed without forming the phase adjustment area 254, as illustrated in Figure 17A, where each layer of GaInP/GaAsP/GaInP is removed by wet pickling. As illustrated in Figure 17B, if a phase adjustment area 254 is not formed, the reflectance can be greatly altered by varying the thickness of the first wavelength adjustment layer 250. Such a point could mean that the deviation of a characteristic of the laser, such as an electric current threshold for each wavelength, can increase.
[0142] On the other hand, the phase adjustment area 254 is formed over the first wavelength adjustment layer 250, as shown in Figure 18A, whereby it may be possible to make a position in which the optical thickness of the first layer of wavelength adjustment 250 is À/4, where the position at which the first adjustment layer 252 made of GaAsP is formed. In this way, it may be possible to reduce the reflectance variation, as illustrated in Figure 18B.
[0143] That is, it is preferable that the optical thickness P1 of the first wavelength adjustment layer 250 is /4 <P1 <À/2 and, when such a subject is generalized, (2N-1)À/4 <P1 < 2NA/4 is preferred. Also, N is a positive integer.
[0144] Furthermore, it is preferable to perform the formation in such a way that when the number of layers of (a) formed film(s) (adjustment layer(s)) is M (where M is a number positive integer), a position at which the optical film thickness of the first wavelength adjustment layer 250 is À/4 is one ((M+1)/2)-th film (adjustment layer) from a top of it in a case where M is an odd number or a (M/2)th or ((M/2)+1)th film (adjustment layer) from a top of it in a case where M is an even number.
[0145] As shown in Figure 19A, the phase adjustment area 254 can be made of p-Al0.1Ga0.9As and, as shown in Figure 19B, the phase adjustment area 254a can be formed by alternately laminating GaInP and GaAsP. Furthermore, although the first wavelength adjustment layer 250 has been described above, similar point(s) also apply to the second wavelength adjustment layer 260.
[0146] Meanwhile, for a wavelength adjustment layer, Japanese Patent Application Publication No. 11-330631 describes a combination of AlGaAs and InGaP and Japanese Patent No. 2751814 describes a combination of GaAs and AlGaAs. Both use AlGaAs including Al but there can be a problem in terms of reliability since Al is included and hence corrosion such as oxidation can easily occur. In particular, when crystal growth of a semiconductor layer is carried out after etching a wavelength adjustment layer as per the present embodiment, a surface of the wavelength adjustment layer contacts the atmosphere in a manufacturing process and, consequently, an Al surface can be oxidized so that it can be extremely difficult to carry out crystal growth for a superior Bragg reflector over it. On the other hand, the wavelength adjustment layer is made of GaInP and GaAsP, which does not include Al in the laser element in the present embodiment, unlike Japanese Patent No. 2751814 or Japanese Patent Application Publication No. 11- 330631, whereby it may be possible to greatly reduce the progression of corrosion in a manufacturing process and it may be possible to obtain high reliability.
[0147] Furthermore, although an example of a combination of GaAsP and GaInP has been described in relation to the present embodiment, a combination may be provided with another material that does not include Al, for which a different pickling fluid is still provided and it is a semiconductor material with a band energy amplitude greater than the oscillation wavelength. In a case of 780 nm, which is an oscillating wavelength in the present embodiment, it may be possible to provide, for example, GaInAsP/GaInP, GaAsP/GaInAsP, etc., as such combination of semiconductor materials. Furthermore, it may also be possible to use, instead of GaAs, GaAsP at a wavelength which is a long wavelength of 1 µm or greater. In such a case, distortion of such GaAsP may not occur for a GaAs substrate and therefore it may be easy to handle.
[0148] Furthermore, (a) content(s) different from that described above is/are similar to those of the first embodiment. [Fourth Achievement]
[0149] Next, a fourth embodiment will be described. A surface emitting laser element in the present embodiment will be described based on Figure 20. A surface emitting laser element 300 in the present embodiment has eight surface emitting lasers on a substrate 301, wherein surface emitting lasers emitting light on different wavelengths by virtue of the first to third embodiments are formed and, in addition, surface-emitting lasers emitting light with an identical wavelength are formed two by two.
[0150] Specifically, the surface emitting laser element 300 in the present embodiment has a first surface emitting laser 311, second surface emitting laser 312, third surface emitting laser 313, fourth surface emitting laser 314, fifth surface emitting laser surface 315, sixth surface emitting laser 316, seventh surface emitting laser 317, and eighth surface emitting laser 318 on substrate 301. Each of the first surface emitting laser 311 to the eighth surface emitting laser 318 is connected to a block of electrodes. Specifically, an electrode block 321 is connected to the first surface emitting laser 311, an electrode block 322 is connected to the second surface emitting laser 312, an electrode block 323 is connected to the third surface emitting laser 313, and a block of electrodes 324 are connected to the fourth surface emitting laser 314, while an electrode block 325 is connected to the fifth surface emitting laser 315, an electrode block 326 is connected to the sixth surface emitting laser 316, an electrode block 327 is connected. connected to the seventh surface emitting laser 317 and an electrode pad 328 is connected to the eighth surface emitting laser 318.
[0151] Furthermore, the first surface emitting laser 311 to the eighth surface emitting laser 318 are formed in such a way that those for an identical wavelength are provided two by two. Specifically, the light emitted from the first surface emitting laser 311 and the second surface emitting laser 312 have an identical wavelength À1 and the light emitted from the third surface emitting laser 313 and the fourth surface emitting laser 314 has an identical 2 wavelength, while light emitted from the fifth surface emitting laser 315 and sixth surface emitting laser 316 has an identical wavelength À3 and light emitted from the seventh surface emitting laser 317 and the eighth surface emitting laser 318 has an identical wavelength 4, wherein the wavelengths À1 to À4 are mutually different wavelengths. Thus, in order to emit light with a different wavelength in each surface emitting laser, a wavelength adjustment layer is provided similarly to the first embodiment and formed such that the thickness of the length adjustment layer waveform is changed for each surface emitting laser. Additionally, the size of each of electrode pads 321 to 328 is about 50 µm square and substrate 301 is a semiconductor chip with a size of 300 µm square.
[0152] In the surface emitting laser element in the present embodiment, surface emitting lasers for light emitting with an identical wavelength are present two by two in which even one of the surface emitting lasers for light emitting with an identical wavelength emits light due to a fault, a problem, etc., it may be possible to use the others. Consequently, it may be possible for the service life of a surface emitting laser element to be prolonged and it may be possible to improve its performance even further. Furthermore, in the surface emitting laser element in the present embodiment, not only an element with a wavelength closer to a required wavelength, but also an element with a second wavelength closer can be used and such element it can be used as a preparatory surface emitting laser, whereby a longer service life may be possible.
[0153] Furthermore, a content(s) different from that described above is/are similar to those of the first to third embodiments. [Fifth Achievement]
[0154] Next, a fifth embodiment will be described. The present embodiment is an atomic oscillator using the surface emitting laser element of the first through fourth embodiments. The atomic oscillator in the present embodiment will be described based on Figure 21. The atomic oscillator in the present embodiment is a compact atomic oscillator of the CPT type and has a light source 410, a collimation lens 420, an A./4 waveplate. 430, an alkali metal cell 440, a photodetector 450 and a modulator 460.
[0155] For the light source 410, the surface emitting laser element of the first to fourth embodiments is used. For alkali metal cell 440, atomic gas Cs (cesium) is enclosed as an alkali metal in it, where transition from line D1 is used. For the 450 photodetector, a photodiode is used.
[0156] In the atomic oscillator in the present embodiment, the alkali metal cell 440, in which an atomic gas cesium is enclosed, is irradiated with light emitted from the light source 410, so that an electron of a cesium atom is excited. Light that has been transmitted through alkali metal cell 440 is detected by photodetector 450, where a signal detected by photodetector 450 is fed back to modulator 460 and the surface emitting laser element in light source 410 is modulated by the modulator 460.
[0157] Figure 22 illustrates a configuration of atomic energy levels associated with a CPT. A fact is used that the light absorption ratio decreases when electrons are simultaneously excited from two base levels to one excited level. For the surface emitting laser, an element with a wavelength of a carrier wave that is close to 894.6 nm is used. It may be possible to perform wavelength tuning of a carrier wave by changing the temperature or power of the surface emitting laser. When a temperature or power is generated, a shift to a longer wavelength can be caused, whereby a change in the light density of an alkali metal cell is not preferable and therefore it is preferable to use a temperature change . Specifically, it may be possible to adjust the temperature dependence of a wavelength to about 0.05 nm/°C. As illustrated in Figure 23, modulation is performed to generate sidebands on both sides of a carrier wave, where the modulation is performed at 4.6 GHz so that the frequency difference can coincide with 9.2 GHz, which is the energy frequency of a Cs atom. As illustrated in Figure 24, laser light passing through an excited gas Cs is maximum at a time when the sideband frequency difference coincides with the energy frequency difference of a Cs atom and hence a frequency of modulation of the surface emitting laser element in the light source 410 is adjusted by performing feedback in the modulator 460, so that the power of the photodetector 450 can be kept at a maximum value. Since the energy frequency of an atom can be extremely stable, the modulation frequency is a stable value, so such information is obtained as a power. Also, when the wavelength is 894.6 nm, a light source with a wavelength of ± 1 nm may be required. That is, a light source with a wavelength in the range of 893.6 nm - 895.6 nm may be required.
[0158] The surface emitting laser element in the first to fourth embodiments is used in the atomic oscillator in the present embodiment and, consequently, it may be possible to manufacture and supply an atomic oscillator at a low cost. Furthermore, the surface emitting laser element in the third embodiment and/or fourth embodiment is used and therefore it may be possible to additionally provide an atomic oscillator with a longer service life.
[0159] Furthermore, although Cs is used as an alkali metal in the present embodiment and a surface emitting laser for a wavelength of 894.6 nm is used for the D1 line transition thereof, it may also be possible to use 852 .3 nm in a case where the D2 line of Cs is used. In addition, it may also be possible to use Rb (rubidium) as an alkali metal, where it may be possible to use 795.0 nm in a case where the D1 line is used or 780.2 nm in a case where the D2 line is used . It may be possible to design a material composition of an active layer, etc., depending on the wavelength. Also, for a modulation frequency in a case where Rb is used, the modulation is performed at 3.4GHz for 87Rb or 1.5GHz for 85Rb. Additionally, even for such wavelengths, a light source with a wavelength range of ± 1 nm may be required. That is, when the D2 line of Cs is used, a light source with a wavelength of 851.3 nm - 853.3 nm may be required. In addition, when the D1 line of Rb is used, a light source with a wavelength of 794.0 nm - 796.0 nm may be required. In addition, when the D2 line of Rb is used, a light source with a wavelength of 779.2 nm - 781.2 nm may be required.
[0160] Although some embodiments of the present invention have been described above, the content of the invention is not limited to the content(s) mentioned above. Furthermore, although a case where a surface emitting laser element is used for an atomic oscillator has been described in some embodiments of the present invention, it may be possible to use the surface emitting laser element of the first through fourth embodiments for another device that requires light of a predetermined wavelength, such as a gas sensor, etc. In such a case, a surface emitting laser for light with a predetermined wavelength corresponding to an application thereof is also used in such a device, whereby it may be possible to obtain a similar effect. [Attachment] <Illustrative embodiment(s) of a surface emitting laser element, a method for fabricating a surface emitting laser element and an atomic oscillator>
[0161] At least one illustrative embodiment of the present invention can refer to a surface emitting laser element, a method for manufacturing a surface emitting laser element and an atomic oscillator.
[0162] An objective of at least one illustrative embodiment of the present invention may be to provide a surface emitting laser element with multiple surface emitting lasers capable of more accurately oscillating with a desired wavelength range.
[0163] At least one illustrative embodiment of the present invention can be characterized by having multiple surface emitting lasers having a lower Bragg reflector formed on a semiconductor substrate, a resonator that includes an active layer formed on the lower Bragg reflector and a reflector Bragg reflector formed over the resonator, in which a wavelength adjustment layer is formed over the upper Bragg reflector or lower Bragg reflector, in which their emission is provided at different wavelengths, respectively, when varying the thickness of the wavelength adjustment layer, where the wavelength adjustment layer is formed by laminating respective adjustment layers made of two different types of materials, and where the thickness of the wavelength adjustment layer is changed by varying the number of layers of adjustment layers in the wavelength adjustment layer.
[0164] Furthermore, at least one illustrative embodiment of the present invention can be characterized by a method for manufacturing a surface emitting laser element with multiple surface emitting lasers having a lower Bragg reflector formed on a semiconductor substrate, a resonator that includes an active layer formed over the lower Bragg reflector and an upper Bragg reflector formed over the resonator, wherein a wavelength adjustment layer is formed over the upper Bragg reflector or lower Bragg reflector, wherein their emission is provided at different wavelengths, respectively, by varying the thickness of the wavelength adjustment layer, wherein the wavelength adjustment layer is formed by laminating respective adjustment layers made of two types of different materials and where the thickness of the wavelength adjustment layer is changed by removing the adjustment layer(s) in the layer of wavelength adjustment for each of the adjustment layers to change the number of layers thereof, which has a step of removing an adjustment layer with a first etching fluid between the respective adjustment layers consisting of two types of different materials in the wavelength adjustment layer and a step of removing the other adjustment layer with a second stripping fluid between respective adjustment layers made of two different types of materials in the wavelength adjustment layer, in that the first pickling fluid and the second pickling fluid are different from each other.
[0165] The illustrative embodiment (1) is a surface emitting laser element characterized by having multiple surface emitting lasers having a lower Bragg reflector formed on a semiconductor substrate, a resonator that includes an active layer formed on the Bragg reflector lower and an upper Bragg reflector formed over the resonator, wherein a wavelength adjustment layer is formed over the upper Bragg reflector or the lower Bragg reflector, wherein their emission is provided at different wavelengths , respectively, by varying the thickness of the wavelength adjustment layer, wherein the wavelength adjustment layer is formed by laminating respective adjustment layers made of two different types of materials, and wherein the adjustment layer thickness The wavelength is changed by varying the layer number of the adjustment layers in the wavelength adjustment layers.
[0166] The illustrative embodiment (2) is the surface emitting laser element as described in the illustrative embodiment (1), characterized in that the optical thickness P of the wavelength adjustment layer is (2N-1)À /4 <P < NÀ/2, where À is the wavelength of the surface-emitting laser and N is a positive integer.
[0167] The illustrative embodiment (3) is the surface emitting laser element as described in illustrative embodiments (1) or (2), characterized in that the M layers (M is a positive integer) of the adjustment layers are formed over the wavelength adjustment layer, where a position where the optical film thickness of the wavelength adjustment layer is À/4 from a side where the active layer is provided is a ( (M+1)/2)-th adjustment layer from above in a case where M is an odd number or one (M/2)-th or ((M/2)+1)-th layer from above it in a case where M is an even number.
[0168] The illustrative embodiment (4) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (3), characterized in that the wavelength adjustment layer is constituted by a wavelength adjustment area 10 and a phase adjustment area, wherein the wavelength adjustment area consists of respective adjustment layers made of two different types of materials.
[0169] The illustrative embodiment (5) is the surface emitting laser element as described in the illustrative embodiment (4), characterized in that the wavelength adjustment layer includes a contact layer formed on a closer side of the resonator than the wavelength adjustment area, where the contact layer is connected to an electrode.
[0170] The illustrative embodiment (6) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (5), characterized in that a set of wavelength adjustment layers is formed .
[0171] The illustrative embodiment (7) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (6), characterized in that a set of wavelength adjustment layers is formed over the top Bragg reflector.
[0172] The illustrative embodiment (8) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (7), characterized in that the film thickness of the wavelength adjustment layer is changed when performing adjustment layer removal on the wavelength adjustment layer, where an adjustment layer between the respective adjustment layers made of two different types of materials in the wavelength adjustment layer is removed by a first blasting fluid and the other adjusting layer is removed by a second blasting fluid, wherein the first blasting fluid and the second blasting fluid are different from each other.
[0173] The illustrative embodiment (9) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (8), characterized in that an adjustment layer between the respective adjustment layers constituted by two different material types in the wavelength adjustment layer is made of GaInP and the other adjustment layer is made of GaAsP or GaAs.
[0174] The illustrative embodiment (10) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (9), characterized in that the upper Bragg reflector includes a first upper Bragg reflector , a wavelength adjusting layer and a second upper Bragg reflector formed in the order from one side where the active layer is formed, where the second upper Bragg reflector is formed by alternately laminating and shaping dielectrics with different refractive indices.
[0175] The illustrative embodiment (11) is the surface emitting laser element as described in any of the illustrative embodiments (1) to (10), characterized in that at least one of the multiple wavelengths is included in a range 893.6 nm - 895.6 nm, 851.3 nm - 853.3 nm, 794.0 nm - 796.0 nm, or 779.2 nm - 781.2 nm.
[0176] The illustrative embodiment (12) is a method for fabricating a surface emitting laser element with multiple surface emitting lasers having a lower Bragg reflector formed on a semiconductor substrate, a resonator that includes an active layer formed on the lower Bragg reflector and an upper Bragg reflector formed over the resonator, wherein a wavelength adjustment layer is formed in the upper Bragg reflector or lower Bragg reflector, wherein their emission is provided in wavelengths different, respectively, by a variation in the thickness of the wavelength adjustment layer, wherein the wavelength adjustment layer is formed by laminating the respective adjustment layers made of two different types of materials, and wherein the thickness of the wavelength adjustment layer is changed by removing the adjustment layer(s) in the wavelength adjustment layer for each of the wavelength adjustment layers. adjustment to change the number of layers thereof, characterized by having a step of removing an adjustment layer by a first pickling fluid between the respective adjustment layers consisting of two different types of materials in the wavelength adjustment layer and a step of removing the other adjustment layer by a second blasting fluid between respective adjustment layers made of two different types of materials in the wavelength adjustment layer, wherein the first blasting fluid and the second blasting fluid are different from each other.
[0177] The illustrative embodiment (13) is the method for manufacturing a surface emitting laser element as described in the illustrative embodiment (12), characterized in that an adjustment layer between respective adjustment layers made of two types of different materials in the wavelength adjustment layer is made of GaInP and the other adjustment layer is made of GaAsP or GaAs.
[0178] The illustrative embodiment (14) is the method for manufacturing a surface emitting laser element as described in either of the illustrative embodiment (12) or (13), characterized in that the upper Bragg reflector layer includes an upper first Bragg reflector, a wavelength adjustment layer, and a second Bragg reflector formed in the order from one side where the active layer is formed, where the second upper Bragg reflector is formed by laminar and alternately shaping dielectrics with different refractive indices.
[0179] The illustrative embodiment (15) is an atomic oscillator characterized by having the surface emitting laser element as described in any of the illustrative embodiments (1) to (11), an alkali metal cell enclosing an alkali metal and a photodetector for detecting light that has been transmitted through the alkali metal cell between light radiating into the alkali metal cell from a surface emitting laser on the surface emitting laser element, wherein light having two different wavelengths between the light emitted from the surface emitting laser and including a sideband is incident on the alkali metal cell, whereby the oscillation frequency is controlled based on a light absorption characteristic caused by a quantum interference effect of two types of resonant light.
[0180] The illustrative embodiment (16) is the atomic oscillator as described in the illustrative embodiment (15), characterized by the fact that the alkali metal is rubidium or cesium.
[0181] According to at least one illustrative embodiment of the present invention, it may be possible to provide a surface emitting laser element having multiple surface emitting lasers capable of more accurately oscillating in a desired wavelength range, since it may be possible to increase the film thickness of a film that forms a wavelength adjustment layer.
[0182] Although (one) illustrative embodiment(s) and/or specific example(s) of the present invention has/have been described with reference to the accompanying drawings, the present invention is not limited to any illustrative embodiment and/or specific example and the illustrative embodiment(s) and/or specific example(s) may be changed, modified or combined ) without departing from the scope of the present invention.
[0183] The present application claims the priority benefit based on Japanese Patent Application No. 2011-264908, filed on December 2, 2011 and Japanese Patent Application No. 2012-234113, filed on October 23, 2012, the contents of which are hereby incorporated by reference in their entirety.

权利要求:
Claims (14)
[0001]
1. A surface emitting laser element comprising a semiconductor substrate (101) and a plurality of surface emitting lasers (11, 12, 13, 14) configured to emit light at different wavelengths from each other, each light emitting laser surface, including a lower Bragg reflector (102) provided over the semiconductor substrate, a resonator provided over the lower Bragg reflector, an upper Bragg reflector (106, 107) provided over the resonator, and a length adjustment layer (120), the wavelength adjustment layers included in surface emitting lasers having mutually different thicknesses, and characterized in that: at least one of the wavelength adjustment layers includes a plurality of adjustment layers of laminate made of two kinds of materials, and the numbers of adjustment layers included in the wavelength adjustment layer that are mutually different, and the adjustment layers and wavelength are provided inside the upper Bragg reflector or the lower Bragg reflector, being arranged in the thickness direction between two parts of the upper Bragg reflector or the lower Bragg reflector.
[0002]
2. A surface emitting laser element according to claim 1, characterized in that at least one of the wavelength adjustment layers is configured to satisfy the condition of (2N-1)À/4 < P < NÀ/2, where P is an optical thickness of at least one of the wavelength adjustment layers, À is a wavelength of light to be emitted from each surface-emitting laser, and N is an integer positive.
[0003]
3. Surface emitting laser element according to claim 1, characterized in that M is a number of adjustment layers included in at least one of the wavelength adjustment layers, and a position of an optical thickness of at least one of the wavelength adjustment layers being À/4 from one side of the resonator is provided in a ((M+1)/2)-th adjustment layer of an upper part of the adjustment layers in a case where M is an odd number or a (M/2)th or ((M/2)+1)th adjustment layer of a top of the adjustment layers in a case where M is a number pair.
[0004]
4. A surface emitting laser element according to claim 1, characterized in that at least one of the wavelength adjustment layers includes a wavelength adjustment area (120) and a wavelength adjustment area. phase (131), and the wavelength adjustment area includes adjustment layers made of two types of materials.
[0005]
5. A surface emitting laser element according to claim 4, characterized in that at least one of the wavelength adjustment layers includes a contact layer (110) provided on a side closer to the resonator than the area of wavelength adjustment and the contact layer is connected at its periphery to an electrode (111).
[0006]
6. Surface emitting laser element according to claim 1, characterized in that at least one of the wavelength adjustment layers is provided in the upper Bragg reflector.
[0007]
7. Surface emitting laser element according to claim 1, characterized in that an adjustment layer in at least one of the wavelength adjustment layers is made of GaInP and another adjustment layer is made of of GaAsP or GaAs.
[0008]
8. A surface emitting laser element according to claim 1, characterized in that the upper Bragg reflector includes a first upper Bragg reflector portion (106), the wavelength adjustment layer (120) , and a second upper Bragg reflector part (107) to one side of the resonator, and the second upper Bragg reflector part is composed of alternately laminated dielectrics with different refractive indices.
[0009]
9. Surface emitting laser element according to claim 1, characterized in that at least one of the mutually different wavelengths is included in a range from 893.6 nm to 895.6 nm, 851.3 nm at 853.3 nm, 794.0 nm at 796.0 nm, or 779.2 nm at 781.2 nm.
[0010]
10. Method for manufacturing a surface emitting laser element including a plurality of surface emitting lasers configured to emit light having different wavelengths from each other, characterized in that it comprises the steps of forming a lower Bragg reflector on a semiconductor substrate, forming a resonator in the lower Bragg reflector, forming an upper Bragg reflector in the resonator layers, laminating the adjustment layers made of two types of materials inside the upper Bragg reflector or the Bragg reflector bottom so as to form a wavelength adjustment layer disposed in a thickness direction between two parts of the upper Bragg reflector or the lower Bragg reflector, removing an adjustment layer in the wavelength adjustment layer, using a first pickling fluid, and removing another adjustment layer in the wavelength adjustment layer, using o a second blasting fluid different from the first blasting fluid, so that the wavelength adjustment layers included in the surface emitting lasers have mutually different thicknesses and the numbers of adjustment layers included in the wavelength adjustment layers are mutually different.
[0011]
11. Method for manufacturing a surface emitting laser element according to claim 10, characterized in that an adjustment layer in the wavelength adjustment layer is made of GaInP and another adjustment layer is made of of GaAsP or GaAs.
[0012]
12. Method for manufacturing a surface emitting laser element according to claim 10, characterized in that the upper Bragg reflector layer is formed to include a first upper Bragg reflector part and a second part. of Bragg reflector, wherein the first upper Bragg reflector part, the wavelength adjustment layer, and the second Bragg reflector part are formed so from one side of the resonator, and wherein the second Upper Bragg reflector part is formed by alternating lamination of dielectrics with different refractive indices.
[0013]
13. Atomic oscillator characterized in that it comprises the surface emitting laser element (410) as defined in claim 1, an alkali metal cell (410) including an alkali metal to be irradiated with light emitted from the surface emitting laser element, a photodetector (450) configured to detect light transmitted through the alkali metal cell, and a controller configured to control the oscillation frequency of the surface emitting laser element based on light detected by the photodetector.
[0014]
14. Atomic oscillator according to claim 13, characterized in that the alkali metal includes rubidium or cesium.

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同族专利:

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公开号 | 公开日

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US20140354367A1|2014-12-04|

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WO2013081176A1|2013-06-06|

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JP6303255B2|2018-04-04|

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IN2014CN04207A|2015-07-17|

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US9496686B2|2016-11-15|

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EP2786457A4|2015-05-20|

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JP2013138176A|2013-07-11|

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RU2599601C2|2016-10-10|

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EP2786457A1|2014-10-08|

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法律状态:
2018-12-04| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|

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2020-03-03| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|

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2021-06-01| B350| Update of information on the portal [chapter 15.35 patent gazette]|

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2021-06-29| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|

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2021-09-14| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 29/11/2012, OBSERVADAS AS CONDICOES LEGAIS. |

优先权:

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申请号 | 申请日 | 专利标题

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JP2011-264908|2011-12-02|

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JP2011264908|2011-12-02|

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